Newly Developed NTT Technology Opens Door to Thin LED Production

In a world first, Nippon Telegraph and Telephone Corp. (NTT) announced on April 11, 2012, that it had developed gallium nitride (GaN)-based thin-film devices, an element generally used with light-emitting diode (LED), from a substrate for layer growth.

This technology enables thin-film devices of 0.002 millimeters to be produced at low cost, which will assist in the development of solar cells that can transmit visible light while absorbing ultraviolet light for electricity generation is expected.

Conventionally, substrate thicknesses of 0.5 mm accounted for the entire LED itself. Using this technology, the production of thin LEDs of about 0.2 mm in thickness is possible.

The company intends to increase the area of the devices to be released, apply the device to solar cells attachable to windows or vehicles, and improve the performance of conventional solar cells.

Posted: 2012/08/07 06:00:15 AM